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TK10A80E,S4X - Toshiba

Description: MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS

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PCB Footprints
TK10A80E,S4X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-10U1S (TO-220SIS)
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3D Models
TK10A80E,S4X - Toshiba  - 3D model - Transistor Outline, Vertical - 2-10U1S (TO-220SIS)
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TK10A80E,S4X Details

  • Manufacturer Part Number:

    TK10A80E,S4X

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SC-67, TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    454 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK10A80E,S4X Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a heat sink or a thermal pad to ensure efficient heat dissipation.
  • The device requires a stable input voltage (VCC) and a proper biasing circuit to ensure optimal performance. A voltage regulator or a voltage reference should be used to maintain a stable input voltage.
  • Handle the device in an ESD-protected environment, wear an ESD wrist strap or use an ESD mat, and avoid touching the device's pins or leads. Use an anti-static bag or wrap the device in anti-static material during storage or transportation.
  • The optimal gate resistor value depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. Consult the application note or contact Toshiba support for more information.
  • For high-power applications, ensure good thermal contact between the device and the heat sink, use a thermal interface material (TIM) if necessary, and provide adequate airflow around the device. Monitor the device's junction temperature and adjust the thermal management strategy accordingly.

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