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TK110A10PL,S4X - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=36W F=1MHZ

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TK110A10PL,S4X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220sis
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TK110A10PL,S4X - Toshiba  - 3D model - Transistor Outline, Vertical - TO-220sis
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TK110A10PL,S4X Details

  • Manufacturer Part Number:

    TK110A10PL,S4X

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    35 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.0108 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    36 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK110A10PL,S4X Frequently Asked Questions (FAQs)

  • Toshiba recommends a 4-layer PCB with a solid ground plane and thermal vias to dissipate heat. A minimum of 2 oz copper thickness is recommended. Additionally, a thermal pad on the bottom of the package should be connected to a heat sink or a thermal plane on the PCB.
  • To ensure reliable operation, it's essential to follow the recommended operating conditions, including voltage, current, and temperature. Additionally, consider implementing over-temperature protection, over-voltage protection, and under-voltage lockout to prevent damage from abnormal operating conditions.
  • The TK110A10PL,S4X has built-in ESD protection, but it's still essential to follow proper handling and storage procedures to prevent damage. Use an anti-static wrist strap, mat, or packaging materials, and avoid touching the device's pins or exposed internal components.
  • While the TK110A10PL,S4X is a high-quality device, it's essential to consult with Toshiba's application engineers to determine its suitability for high-reliability or automotive applications. Additional testing, validation, and qualification may be required to meet specific industry standards.
  • Toshiba recommends following the JEDEC J-STD-020D.1 standard for soldering and rework. The device can withstand a maximum of 3 reflow cycles, and the peak temperature should not exceed 260°C for 10 seconds.

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TK110A10PL,S4X Overview

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