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TK31N60W5,S1VF - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR TO-247(OS) MOQ=2000 PD=230W F=1MHZ

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TK31N60W5,S1VF - Toshiba - PCB symbol
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PCB Footprints
TK31N60W5,S1VF - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247
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3D Models
TK31N60W5,S1VF - Toshiba - 3D model - Transistor Outline, Vertical - TO-247
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TK31N60W5,S1VF Details

  • Manufacturer Part Number:

    TK31N60W5,S1VF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-65, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.18

  • Avalanche Energy Rating (Eas):

    437 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    30.8 A

  • Drain-source On Resistance-Max:

    0.099 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9.5 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Pulsed Drain Current-Max (IDM):

    123 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK31N60W5,S1VF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the TK31N60W5,S1VF is -55°C to 150°C.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the driver IC. Avoid using vias under the MOSFET, and use a solid ground plane.
  • Use a voltage clamp or a zener diode to protect against overvoltage, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • For high-power applications, use a heat sink with a thermal interface material (e.g., thermal paste or thermal tape) to ensure efficient heat transfer. Ensure good airflow around the heat sink.

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TK31N60W5,S1VF Overview

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