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TK31N60X,S1F - Toshiba

Description: MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)

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TK31N60X,S1F - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (SC-65)__
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TK31N60X,S1F - Toshiba  - 3D model - Transistor Outline, Vertical - TO-247 (SC-65)__
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TK31N60X,S1F Details

  • Manufacturer Part Number:

    TK31N60X,S1F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-65, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    437 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    30.8 A

  • Drain-source On Resistance-Max:

    0.088 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Pulsed Drain Current-Max (IDM):

    123 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK31N60X,S1F Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the TK31N60X,S1F is -55°C to 150°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current (Ig) is sufficient to charge the gate capacitance quickly.
  • The recommended gate resistor value for the TK31N60X,S1F is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, the TK31N60X,S1F is suitable for high-frequency switching applications up to several hundred kHz, but ensure proper PCB layout, decoupling, and gate drive design to minimize switching losses and ringing.
  • Use a suitable voltage clamp or transient voltage suppressor (TVS) to protect the MOSFET from overvoltage, and consider adding overcurrent protection using a fuse or current sense resistor.

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