TK33S10N1H - Toshiba

TK33S10N1H Details

• Manufacturer Part Number:

  TK33S10N1H

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  DPAK-3/2

• ECCN Code:

  EAR99

• Date Of Intro:

  2016-03-07

• Manufacturer:

  Toshiba America Electronic Components

• YTEOL:

  5.9

• Avalanche Energy Rating (Eas):

  66.5 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  33 A

• Drain-source On Resistance-Max:

  0.0097 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  140 pF

• JESD-30 Code:

  R-PSSO-G2

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  125 W

• Pulsed Drain Current-Max (IDM):

  99 A

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON