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TK39N60W,S1VF - Toshiba

Description: MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF

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TK39N60W,S1VF - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-247
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3D Models
TK39N60W,S1VF - Toshiba  - 3D model - Transistor Outline, Vertical - 3-Pin TO-247
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TK39N60W,S1VF Details

  • Manufacturer Part Number:

    TK39N60W,S1VF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-65, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • Avalanche Energy Rating (Eas):

    608 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    38.8 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    270 W

  • Pulsed Drain Current-Max (IDM):

    155 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK39N60W,S1VF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the TK39N60W,S1VF is -55°C to 150°C.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized. A gate driver IC can be used to provide a high current drive capability.
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Avoid using vias under the MOSFET, and keep the gate trace away from the drain and source traces.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current, and then shut down the MOSFET or trigger an alarm.
  • Use a heat sink with a thermal interface material (TIM) to improve heat transfer. Ensure good airflow around the heat sink, and consider using a fan for high-power applications. Monitor the junction temperature to prevent overheating.

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