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TK430A60F - Toshiba

Description: N-ch MOSFET, 600 V, 0.43 Ω@10V, TO-220SIS, π-MOSⅨ

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PCB Footprints
TK430A60F - Toshiba PCB footprint - Other - Other - TO220SIS-MOS-N
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3D Models
TK430A60F - Toshiba  - 3D model - Other - TO220SIS-MOS-N
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TK430A60F Details

  • Manufacturer Part Number:

    TK430A60F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-12-06

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    460 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.43 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    52 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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TK430A60F Overview

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