Part Image

TK62N60W,S1VF - Toshiba

Description: Trans MOSFET N-CH Si 600V 61.8A 3-Pin(3+Tab) TO-247 Tube

Download TK62N60W,S1VF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
TK62N60W,S1VF - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_2021
click to zoom
3D Models
TK62N60W,S1VF - Toshiba  - 3D model - Transistor Outline, Vertical - TO-247_2021
click to zoom

TK62N60W,S1VF Details

  • Manufacturer Part Number:

    TK62N60W,S1VF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-65, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    698 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    61.8 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    400 W

  • Pulsed Drain Current-Max (IDM):

    247 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK62N60W,S1VF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the TK62N60W,S1VF is -55°C to 150°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • The recommended gate resistor value for the TK62N60W,S1VF is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, the TK62N60W,S1VF is suitable for high-frequency switching applications up to 100 kHz, but ensure proper thermal management and consider the MOSFET's switching losses.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TK62N60W,S1VF Overview

Use the download button to access the TK62N60W,S1VF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TK62N, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TK62N60W,S1VF

Showing 0 results