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TN5325K1-G - Microchip

Description: MICROCHIP - TN5325K1-G - MOSFET, 250V, 0.15A, 150DEG C, 0.36W

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TN5325K1-G - Microchip - PCB symbol
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PCB Footprints
TN5325K1-G - Microchip PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - TN5325K1-G
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TN5325K1-G - Microchip - 3D model - SOT23 (3-Pin) - TN5325K1-G
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TN5325K1-G Details

  • Manufacturer Part Number:

    TN5325K1-G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN PACKAGE-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT-23-3

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    5 Weeks

  • Manufacturer:

    Microchip Technology Inc

  • YTEOL:

    8

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    0.15 A

  • Drain-source On Resistance-Max:

    7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    23 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    0.36 W

  • Power Dissipation-Max (Abs):

    0.36 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    TS 16949

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TN5325K1-G Frequently Asked Questions (FAQs)

  • For optimal thermal performance, it is recommended to use a 4-layer PCB with a solid ground plane, and to place thermal vias under the device to dissipate heat efficiently.
  • To ensure reliable communication, use proper shielding, grounding, and decoupling techniques. Additionally, consider using differential signaling, and implement error-checking mechanisms such as CRC or checksums to detect data corruption.
  • Operating the TN5325K1-G beyond its recommended operating conditions can lead to reduced reliability, increased power consumption, and potential device failure. It is essential to adhere to the recommended operating conditions to ensure optimal performance and longevity.
  • To troubleshoot issues with the TN5325K1-G, use a logic analyzer or oscilloscope to monitor the device's signals, and verify that the power supply and clock signals are stable. Also, review the device's configuration and programming to ensure that it is correct and up-to-date.
  • For firmware updates and version control, use a secure and reliable update mechanism, such as secure boot or digital signatures. Implement a version control system to track changes and ensure that only authorized personnel can make updates.

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TN5325K1-G Overview

Use the download button to access the TN5325K1-G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TN532, or try a keyword search, such as Power Field-Effect Transistors

About Microchip

Microchip Technology Inc. is a leading manufacturer of microcontrollers and semiconductor devices for a wide range of applications in the aerospace, automotive, consumer electronics, industrial, and medical industries. Alongside a comprehensive product portfolio, Microchip Technology Inc. also provides easy-to-use development tools that enable engineers to create optimal designs quickly with minimal iterations to reduce risk while lowering total system costs to market. Headquartered in Chandler, Arizona, th

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