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TP89R103NL - Toshiba

Description: N-ch MOSFET, 30 V, 0.0091 Ω@10V, SOP-8, U-MOSⅧ-H

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TP89R103NL - Toshiba PCB footprint - Small Outline Packages - Small Outline Packages - 2-5R1S _2024
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3D Models
TP89R103NL - Toshiba  - 3D model - Small Outline Packages - 2-5R1S _2024
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TP89R103NL Details

  • Manufacturer Part Number:

    TP89R103NL

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    28 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.0091 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    52 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.9 W

  • Pulsed Drain Current-Max (IDM):

    76 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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TP89R103NL Overview

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