Part Image

TPC6108(TE85L,F,M) - Toshiba

Description: MOSFET MOSFET P-Ch 30V 4.5A Rdson=0.06Ohm

Download TPC6108(TE85L,F,M) Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
TPC6108(TE85L,F,M) - Toshiba PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - 2-3T1A
click to zoom
3D Models
TPC6108(TE85L,F,M) - Toshiba  - 3D model - SOT23 (6-Pin) - 2-3T1A
click to zoom

TPC6108(TE85L,F,M) Details

  • Manufacturer Part Number:

    TPC6108(TE85L,F,M)

  • Part Life Cycle Code:

    Active Unconfirmed

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    1.3 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    75 pF

  • JESD-30 Code:

    R-PDSO-G6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPC6108(TE85L,F,M) Frequently Asked Questions (FAQs)

  • Toshiba recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the power dissipation of the device according to the temperature derating curve provided in the datasheet. Additionally, ensure good thermal design and heat sinking to keep the junction temperature below the maximum rating.
  • Toshiba recommends using a low-ESR ceramic capacitor with a value of 10uF to 22uF, and a voltage rating of 25V or higher, as close to the VIN pin as possible. This helps to filter out noise and ensure stable operation.
  • To protect the device from overvoltage and undervoltage conditions, it is recommended to use a voltage supervisor or a voltage monitor IC to detect and respond to out-of-range voltage conditions. Additionally, consider using a TVS diode or a zener diode to clamp the input voltage to a safe level.
  • Toshiba recommends using a low-ESR ceramic capacitor with a value of 10uF to 22uF, and a voltage rating of 10V or higher, as close to the VOUT pin as possible. This helps to filter out noise and ensure stable operation.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TPC6108(TE85L,F,M) Overview

Use the download button to access the TPC6108(TE85L,F,M) schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TPC61, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TPC6108(TE85L,F,M)

Showing 0 results