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TPC6110(TE85L,F,M) - Toshiba

Description: Trans MOSFET P-CH Si 30V 4.5A 6-Pin VS T/R

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TPC6110(TE85L,F,M) - Toshiba PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TPC6110(TE85L,F,M)
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TPC6110(TE85L,F,M) - Toshiba  - 3D model - SOT23 (6-Pin) - TPC6110(TE85L,F,M)
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TPC6110(TE85L,F,M) Details

  • Manufacturer Part Number:

    TPC6110(TE85L,F,M)

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    3.4 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    85 pF

  • JESD-30 Code:

    R-PDSO-G6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPC6110(TE85L,F,M) Frequently Asked Questions (FAQs)

  • A good PCB layout for the TPC6110 should include a solid ground plane, wide power traces, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it is essential to provide adequate heat sinking, ensure good airflow, and consider derating the device's power handling capabilities. Additionally, using a thermally conductive interface material between the device and heat sink can improve thermal performance.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially catastrophic failure. It is crucial to ensure that the device operates within the specified temperature range to maintain reliability and performance.
  • While the TPC6110 is primarily designed for linear applications, it can be used in high-frequency switching applications with proper design considerations. However, the device's switching performance may not be optimal, and additional components may be required to ensure stable operation.
  • To protect the TPC6110 from EOS and ESD, it is essential to follow proper handling and storage procedures, use ESD-safe materials, and implement protective circuitry such as TVS diodes or zener diodes in the design.

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TPC6110(TE85L,F,M) Overview

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