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TPH2R903PL,L1Q - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR SOP8-ADV PD=81W F=1MHZ

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PCB Footprints
TPH2R903PL,L1Q - Toshiba PCB footprint - Other - Other - SOP Advance-2021
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3D Models
TPH2R903PL,L1Q - Toshiba  - 3D model - Other - SOP Advance-2021
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TPH2R903PL,L1Q Details

  • Manufacturer Part Number:

    TPH2R903PL,L1Q

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

TPH2R903PL,L1Q Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, and to derate the device's power dissipation according to the ambient temperature.
  • The maximum allowable power dissipation for the TPH2R903PL,L1Q is 30W at a junction temperature of 150°C. However, it's recommended to derate the power dissipation based on the ambient temperature and thermal design.
  • Yes, the TPH2R903PL,L1Q is suitable for switching regulator applications due to its low RDS(on) and high-speed switching capabilities. However, it's essential to ensure that the device is properly driven and that the switching frequency is within the recommended range.
  • Toshiba recommends using a gate driver with a high current capability (e.g., 1A or higher) and a low output impedance to ensure fast switching times and minimal power loss. A bootstrap circuit or a dedicated gate driver IC can be used.

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TPH2R903PL,L1Q Overview

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