TPM3R708QM - Toshiba

TPM3R708QM Details

• Manufacturer Part Number:

  TPM3R708QM

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• Manufacturer:

  Toshiba America Electronic Components

• Avalanche Energy Rating (Eas):

  81 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  80 V

• Drain Current-Max (ID):

  140 A

• Drain-source On Resistance-Max:

  0.0037 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  84 pF

• JESD-30 Code:

  R-PDSO-F8

• Number of Elements:

  1

• Number of Terminals:

  8

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  170 W

• Pulsed Drain Current-Max (IDM):

  490 A

• Surface Mount:

  YES

• Terminal Form:

  FLAT

• Terminal Position:

  DUAL

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON