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TPN1600ANH,L1Q - Toshiba

Description: MOSFETs N-Ch DTMOS VII-H 42W 1230pF 36A 100V

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Symbol
TPN1600ANH,L1Q - Toshiba - PCB symbol
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PCB Footprints
TPN1600ANH,L1Q - Toshiba PCB footprint - Other - Other - TSON ADVANCE_23
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3D Models
TPN1600ANH,L1Q - Toshiba - 3D model - Other - TSON ADVANCE_23
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TPN1600ANH,L1Q Details

  • Manufacturer Part Number:

    TPN1600ANH,L1Q

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSON-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    96 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPN1600ANH,L1Q Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern is recommended for optimal thermal performance.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal interface material to reduce thermal resistance. Monitor the device's junction temperature to prevent overheating.
  • The TPN1600ANH,L1Q has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures to prevent damage. Use an ESD wrist strap or mat, and handle the device by the body or pins, not the leads.
  • Yes, the TPN1600ANH,L1Q is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards (e.g., AEC-Q100).
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the leads, and handle the device by the body or pins, not the leads. Use anti-static packaging and follow standard ESD handling procedures.

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TPN1600ANH,L1Q Overview

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