Part Image

TPWR8004PL,L1Q - Toshiba

Description: MOSFET N-CH Mosfet 40V 150A 8DSOP

Download TPWR8004PL,L1Q Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
TPWR8004PL,L1Q - Toshiba PCB footprint - Other - Other - SOP ADVANCE
click to zoom
3D Models
TPWR8004PL,L1Q - Toshiba  - 3D model - Other - SOP ADVANCE
click to zoom

TPWR8004PL,L1Q Details

  • Manufacturer Part Number:

    TPWR8004PL,L1Q

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    336 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    340 A

  • Drain-source On Resistance-Max:

    0.00135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    58 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPWR8004PL,L1Q Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal pad to maintain a safe junction temperature. Monitor the device's thermal resistance (RθJA) and adjust the system design accordingly.
  • Handle the device by the body, not the leads. Avoid bending or twisting the leads. Store the device in a dry, cool place, away from direct sunlight and moisture. Use anti-static packaging and handling procedures to prevent ESD damage.
  • Check the input voltage, output voltage, and output current. Verify that the device is properly configured and that the output capacitor is suitable for the application. Check for any signs of overheating or thermal shutdown.
  • Use a shielded enclosure and ensure proper grounding. Implement EMI filtering and shielding on the input and output lines. Follow good PCB layout practices to minimize radiation and susceptibility.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TPWR8004PL,L1Q Overview

Use the download button to access the TPWR8004PL,L1Q schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TPWR8, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TPWR8004PL,L1Q

Showing 0 results