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TSM900N06CWRPG - Taiwan Semiconductor

Description: N-Channel 60 V 6A (Tc) 7.8W (Tc) Surface Mount SOT-223

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PCB Footprints
TSM900N06CWRPG - Taiwan Semiconductor PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223_2024
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3D Models
TSM900N06CWRPG - Taiwan Semiconductor  - 3D model - SOT223 (3-Pin) - SOT-223_2024
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TSM900N06CWRPG Details

  • Manufacturer Part Number:

    TSM900N06CWRPG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-223, 4 PIN

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • Manufacturer:

    Taiwan Semiconductor

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    24 pF

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    7.8 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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TSM900N06CWRPG Overview

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