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TTC5460B - Toshiba

Description: NPN Bipolar Transistor, 800 V, 0.05 A, TO-126N

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PCB Footprints
TTC5460B - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-8U1A
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3D Models
TTC5460B - Toshiba  - 3D model - Transistor Outline, Vertical - 2-8U1A
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TTC5460B Details

  • Manufacturer Part Number:

    TTC5460B

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-126N, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-02-05

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Collector Current-Max (IC):

    0.05 A

  • Collector-Base Capacitance-Max:

    2.2 pF

  • Collector-Emitter Voltage-Max:

    800 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    1.5 W

  • Power Dissipation-Max (Abs):

    10 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    5.5 MHz

  • VCEsat-Max:

    1 V

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TTC5460B Overview

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Part Image TTC5460B,Q(S Toshiba America Electronic Components

Power Bipolar Transistor, 0.05A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin