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UHB100SC12E1BC3N - onsemi

Description: Silicon Carbide (SIC) Cascode JFET Module - Elite SIC, Half-Bridge Module, 1200 V, 9.4 m ohm

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UHB100SC12E1BC3N - onsemi PCB footprint - Other - Other - E1B_2025-1
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UHB100SC12E1BC3N - onsemi  - 3D model - Other - E1B_2025-1
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UHB100SC12E1BC3N Details

  • Manufacturer Part Number:

    UHB100SC12E1BC3N

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    MODULE-18

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    1

  • Case Connection:

    ISOLATED

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    JUNCTION CASCODE

  • Feedback Cap-Max (Crss):

    6.7 pF

  • JESD-30 Code:

    R-XUFM-X18

  • Number of Elements:

    2

  • Number of Terminals:

    18

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    417 W

  • Pulsed Drain Current-Max (IDM):

    700 A

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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UHB100SC12E1BC3N Overview

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