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UMZ18NT106 - ROHM Semiconductor

Description: Zener arrays for terminal protection devices

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UMZ18NT106 - ROHM Semiconductor PCB footprint - Other - Other - UMZ18NT106-2
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UMZ18NT106 - ROHM Semiconductor  - 3D model - Other - UMZ18NT106-2
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UMZ18NT106 Details

  • Manufacturer Part Number:

    UMZ18NT106

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Diode Type:

    ZENER DIODE

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.2 W

  • Reference Voltage-Nom:

    18 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Voltage Tol-Max:

    2.1%

  • Working Test Current:

    5 mA

UMZ18NT106 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for UMZ18NT106 is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Typically, a voltage regulator or a voltage divider network is used to provide a stable voltage supply to the device. Additionally, ensure that the input and output pins are properly terminated to prevent signal reflections and noise.
  • The maximum power dissipation of UMZ18NT106 is typically specified in the datasheet as Pd (Power Dissipation). To calculate the power dissipation, use the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current. Ensure that the calculated power dissipation does not exceed the recommended maximum value to prevent overheating and device damage.
  • To prevent Electrostatic Discharge (ESD) damage, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. When handling the device, avoid touching the pins or leads, and use an anti-static bag or container for storage. Additionally, consider implementing ESD protection circuits or devices in your design to protect the UMZ18NT106 from ESD events.
  • The UMZ18NT106 is a general-purpose N-channel MOSFET suitable for a wide range of applications, including power supplies, motor control, and audio equipment. When selecting a component, consider factors such as voltage and current ratings, power dissipation, and switching frequency. Ensure that the chosen component meets the specific requirements of your design, and consult the datasheet and application notes for guidance.

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