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VS-65EPS12L-M3 - Vishay

Description: Rectifiers Single Diode Alt VS-60EPS12-M3

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PCB Footprints
VS-65EPS12L-M3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AD_2L
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3D Models
VS-65EPS12L-M3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-247AD_2L
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VS-65EPS12L-M3 Details

  • Manufacturer Part Number:

    VS-65EPS12L-M3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2019-04-15

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.98

  • Application:

    HIGH VOLTAGE

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.12 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T2

  • Non-rep Pk Forward Current-Max:

    1000 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    65 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    100 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

VS-65EPS12L-M3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the VS-65EPS12L-M3 can be found in the Vishay Intertechnologies' application note AN42172, which provides guidelines for PCB layout and land pattern design.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a thermal interface material to improve heat transfer between the device and the heat sink.
  • The maximum allowable voltage stress for the VS-65EPS12L-M3 is 65V, as specified in the datasheet. Exceeding this voltage may result in device damage or failure.
  • Yes, the VS-65EPS12L-M3 is suitable for high-frequency applications up to 1 MHz. However, it is recommended to consult the datasheet and application notes for specific guidance on high-frequency design considerations.
  • The VS-65EPS12L-M3 has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing to prevent damage to the device.

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VS-65EPS12L-M3 Overview

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