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VS12VUD1HST15R - ROHM Semiconductor

Description: RASMID™ Series, Uni-directional, Ultra Small TVS for Mobile Device

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VS12VUD1HST15R - ROHM Semiconductor  - 3D model
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VS12VUD1HST15R Details

  • Manufacturer Part Number:

    VS12VUD1HST15R

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DSN0603-2, SOD-962, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Date Of Intro:

    2020-05-19

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.38

  • Additional Feature:

    HIGH RELIABILITY

  • Breakdown Voltage-Max:

    13.8 V

  • Breakdown Voltage-Min:

    12.2 V

  • Breakdown Voltage-Nom:

    13 V

  • Clamping Voltage-Max:

    21.5 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-XBCC-N2

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    129 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.1 W

  • Reference Standard:

    IEC61000-4-2

  • Rep Pk Reverse Voltage-Max:

    12 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    12 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

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VS12VUD1HST15R Overview

Use the download button to access the VS12VUD1HST15R 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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