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VTVS11ASMF-HM3-08 - Vishay

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VTVS11ASMF-HM3-08 Details

  • Manufacturer Part Number:

    VTVS11ASMF-HM3-08

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY, LOW NOISE

  • Breakdown Voltage-Max:

    13.9 V

  • Breakdown Voltage-Min:

    12.6 V

  • Breakdown Voltage-Nom:

    13.25 V

  • Clamping Voltage-Max:

    18 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JEDEC-95 Code:

    DO-219AB

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    400 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    11.2 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

VTVS11ASMF-HM3-08 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the VTVS11ASMF-HM3-08 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay SMD Devices' (document number 28371).
  • The VTVS11ASMF-HM3-08 has a thermal resistance of 25°C/W. To ensure proper thermal management, it is recommended to provide a thermal pad on the PCB, use a heat sink if necessary, and ensure good airflow around the device.
  • The VTVS11ASMF-HM3-08 is designed to withstand voltage stresses up to 150% of the rated voltage for a short duration (less than 1 second). However, it is recommended to follow the derating curve provided in the datasheet to ensure reliable operation.
  • The VTVS11ASMF-HM3-08 is designed for high-frequency applications up to 1 GHz. However, it is recommended to evaluate the device's performance in the specific application by considering factors such as parasitic inductance, capacitance, and impedance.
  • The VTVS11ASMF-HM3-08 is designed to meet the requirements of J-STD-020D. To ensure reliability in a humid environment, it is recommended to follow the moisture sensitivity level (MSL) guidelines and use proper handling and storage procedures.

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VTVS11ASMF-HM3-08 Overview

Use the download button to access the VTVS11ASMF-HM3-08 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image VTVS11ASMF-M3-18 Vishay Intertechnologies

Trans Voltage Suppressor Diode, 400W, 11.2V V(RWM), Unidirectional, 1 Element, Silicon, DO-219AB

Part Image VTVS11ASMF-HM3-18 Vishay Intertechnologies

Trans Voltage Suppressor Diode, 400W, 11.2V V(RWM), Unidirectional, 1 Element, Silicon, DO-219AB