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VTVS58ASMF-M3-08 - Vishay

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VTVS58ASMF-M3-08 Details

  • Manufacturer Part Number:

    VTVS58ASMF-M3-08

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY, LOW NOISE

  • Breakdown Voltage-Max:

    71.4 V

  • Breakdown Voltage-Min:

    64.6 V

  • Breakdown Voltage-Nom:

    68 V

  • Clamping Voltage-Max:

    98 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JEDEC-95 Code:

    DO-219AB

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    400 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Rep Pk Reverse Voltage-Max:

    57.6 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

VTVS58ASMF-M3-08 Frequently Asked Questions (FAQs)

  • The recommended land pattern for VTVS58ASMF-M3-08 can be found in the Vishay Intertechnologies' application note AN483, which provides guidelines for surface mount assembly of Vishay's TVS diodes.
  • To prevent ESD damage, it is recommended to follow standard ESD handling procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Additionally, the device should be stored in its original packaging or in a conductive bag when not in use.
  • While the datasheet specifies a storage temperature range of -55°C to 150°C, the maximum operating temperature range for VTVS58ASMF-M3-08 is -40°C to 125°C, as per Vishay's application note AN483.
  • Yes, VTVS58ASMF-M3-08 is qualified to AEC-Q101, which makes it suitable for use in high-reliability and automotive applications. However, it is recommended to consult with Vishay's application engineers to ensure that the device meets the specific requirements of your application.
  • The correct orientation of the VTVS58ASMF-M3-08 can be determined by referring to the datasheet, which provides a diagram showing the device's polarity marking. The cathode (K) marking should face the correct direction during assembly.

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VTVS58ASMF-M3-08 Overview

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Part Image VTVS58ASMF-HM3-08 Vishay Intertechnologies

Trans Voltage Suppressor Diode, 400W, 57.6V V(RWM), Unidirectional, 1 Element, Silicon, DO-219AB

Part Image VTVS58ASMF-M3-18 Vishay Intertechnologies

Trans Voltage Suppressor Diode, 400W, 57.6V V(RWM), Unidirectional, 1 Element, Silicon, DO-219AB

Part Image VTVS58ASMF-HM3-18 Vishay Intertechnologies

Trans Voltage Suppressor Diode, 400W, 57.6V V(RWM), Unidirectional, 1 Element, Silicon, DO-219AB