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ZDT751TA - Diodes Incorporated

Description: Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 140MHz 2.75W Surface Mount SM8

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ZDT751TA - Diodes Incorporated PCB footprint - Small Outline Packages - Small Outline Packages - SM-8_2023
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ZDT751TA - Diodes Incorporated  - 3D model - Small Outline Packages - SM-8_2023
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ZDT751TA Details

  • Manufacturer Part Number:

    ZDT751TA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    SOT-223

  • Package Description:

    SOT-223, 8 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    28 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    1

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    140 MHz

ZDT751TA Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the ZDT751TA is -40°C to 125°C.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 1uF and a maximum equivalent series resistance (ESR) of 1 ohm.
  • The maximum input voltage that the ZDT751TA can handle is 18V.
  • Yes, the ZDT751TA is suitable for high-temperature applications due to its high operating temperature range and low thermal resistance.
  • The power dissipation of the ZDT751TA can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.

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ZDT751TA Alternates

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Part Image ZDT751TC Zetex / Diodes Inc

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin

Part Image ZDT751TA Zetex / Diodes Inc

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin

Part Image UZDT751 Zetex / Diodes Inc

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin

Part Image ZDT751TC Diodes Incorporated

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin

Part Image UZDT751 Diodes Incorporated

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin

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