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ZXMHC6A07T8TA - Diodes Incorporated

Description: MOSFET H-Bridge N/P-Ch 60V 1.8A/1.5A SM8 Diodes Inc ZXMHC6A07T8TA Quad N/P-channel MOSFET Transistor, 60 V, 8-Pin SM8

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ZXMHC6A07T8TA - Diodes Incorporated - PCB symbol
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PCB Footprints
ZXMHC6A07T8TA - Diodes Incorporated PCB footprint - Small Outline Packages - Small Outline Packages - SM-8
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3D Models
ZXMHC6A07T8TA - Diodes Incorporated - 3D model - Small Outline Packages - SM-8
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ZXMHC6A07T8TA Details

  • Manufacturer Part Number:

    ZXMHC6A07T8TA

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Pin Count:

    8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    1

  • Configuration:

    BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    1.6 A

  • Drain-source On Resistance-Max:

    0.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8.7 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    4

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 7 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    8.4 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ZXMHC6A07T8TA Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the ZXMHC6A07T8TA is a standard SOT23 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source, and the enable pin (EN) to a logic-level signal. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to minimize noise and ripple.
  • The ZXMHC6A07T8TA is rated for operation in ambient temperatures ranging from -40°C to 125°C. However, the device's performance and reliability may degrade at extreme temperatures.
  • Yes, the ZXMHC6A07T8TA is AEC-Q100 qualified, making it suitable for automotive and high-reliability applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure the device meets the required reliability standards.
  • To prevent electrostatic discharge (ESD) damage, handle the ZXMHC6A07T8TA with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or handling it in environments with high electrostatic potential.

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ZXMHC6A07T8TA Overview

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ZXMHC6A07T8TA Alternates

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Part Image ZXMHC6A07T8TA Zetex / Diodes Inc

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.3ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image ZXMHC6A07T8TC Diodes Incorporated

Power Field-Effect Transistor, 1.6A I(D), 60V, 0.3ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET