Price & Stock for SCT040W120G3-4
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DigiKey
SILICON CARBIDE POWER MOSFET 120
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT040W120G3-4 DISTI # 497-SCT040W120G3-4-NDSTMicroelectronics Tube 1 Compliant 0
Tube- 510 $5.62500
- 120 $6.38117
- 30 $7.47667
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Avnet Americas
Silicon Carbide MOSFET, Single, N Channel, 40 A, 1.2 kV, 54 Milliohms, HiP247, 4 Pins - Trays (Alt: SCT040W120G3-4)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT040W120G3-4 DISTI # SCT040W120G3-4STMicroelectronics Tray 600 22 Weeks, 0 Days Not Compliant 0 - 9600 $5.45625
- 4800 $5.48438
- 2400 $5.55556
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Newark
SIC MOSFET, N-CH, 1.2KV, 40A, HIP247-4; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:1.2kV; No. of Pins:4Pins; Rds(on) Test Voltage:18V; Power Dissipation:312W RoHS Compliant: Yes
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT040W120G3-4 DISTI # 14AM7984STMicroelectronics Bulk 1 Compliant 0 - 100 $7.02000
- 50 $7.22000
- 25 $7.42000
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STMicroelectronics
Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT040W120G3-4 DISTI #STMicroelectronics 1 Compliant 0 - 500 $6.30000
- 100 $6.30000
- 10 $7.32000
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