175-R Model Download Search Results
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FDA24N50
onsemi
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1 | Last Shipments - Power MOSFET, N-Channel, UniFETTM, FRFET, 500 V, 28 A, 175 mΩ, TO-3P | Transistor Outline, Vertical | FDA24N50 |
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BUK9Y41-80E/A002X
Nexperia
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1 | N-channel 80 V, 45 mΩ, 175 °C logic level MOSFET in LFPAK56 | Other | BUK9Y41-80E/A002X |
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UJ4C075018K3S
onsemi
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1 | Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge; On-resistance (RDS(on)): 18 mohm (typ) | Transistor Outline, Vertical | UJ4C075018K3S |
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UJ4SC075009B7S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Other | UJ4SC075009B7S |
3
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ISOM5-230-B-L2
Bourns
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1 | Hybrid MOV/GDT, 175 Vrms, 225 V, IsoMOV Series, 470 V, Disc 17mm | Other | ISOM5-230-B-L2 |
3
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TH4D476K016D0400
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4D476K016D0400 |
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UF3C170400B7S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Other | UF3C170400B7S |
3
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TH4B106K010C1800
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4B106K010C1800 |
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TH4B106K010D1800
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4B106K010D1800 |
3
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BUK9Y8R7-60E/A002X
Nexperia
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1 | N-channel 60 V, 8.7 mΩ, 175 °C logic level MOSFET in LFPAK56 | Other | BUK9Y8R7-60E/A002X |
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TH4B106K6R3C1800
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4B106K6R3C1800 |
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UF3SC120040B7S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Other | UF3SC120040B7S |
3
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FFSP10120A
onsemi
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1 | Max Junction Temperature 175 °C; Avalanche Rated 100 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSP10120A |
3
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PMN230ENEAX
Nexperia
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1 | • Logic-level compatible• Extended temperature range Tj = 175 °C• Trench MOSFET technology• ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)• AEC-Q101 qualified | SOT23 (6-Pin) | PMN230ENEAX |
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FFSP3065B
onsemi
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1 | Low Vf @ TJ:175 °C; Max Junction Temperature 175 °C; Avalanche Rated 144 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSP3065B |
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NDSH10120C-F155
onsemi
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1 | Max Junction Temperature 175 °C; Avalanche Rated 95 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery; Low Vf @ TJ:175 °C | Transistor Outline, Vertical | NDSH10120C-F155 |
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STTH1212G
STMicroelectronics
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1 | Ultrafast recovery - 1200 V diode with NC, Very low conduction and switching losses, 12A, 1200 V, -65 to + 175 °C | Other | STTH1212G |
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NDSH20120CDN
onsemi
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1 | Low Vf @ TJ:175 °C; Max Junction Temperature 175 °C; Avalanche Rated 95 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | NDSH20120CDN |
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FFSH5065A
onsemi
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1 | Max Junction Temperature 175 °C; Avalanche Rated 240 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSH5065A |
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GBU6M
onsemi
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1 | Surge Overload Rating: 175 A peak; Glass-Passivated Junction; Ideal for Printed Circuit Bboard; UL certified, UL #E258596; Reliable Low-Cost Construction Utilizing Molded Plastic Technique | Other | GBU6M |
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FFSH3065A
onsemi
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1 | Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery; Pb−Free, Halogen Free/BFR Free and RoHS Compliant | Transistor Outline, Vertical | FFSH3065A |
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FFSB0865B
onsemi
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1 | Low Vf @ TJ:175 °C; Max Junction Temperature 175 °C; Avalanche Rated 33 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Other | FFSB0865B |
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FFSH20120A
onsemi
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1 | Positive Temperature Coefficient; Avalanche Rated 200 mJ; Ease of Paralleling; Max Junction Temperature 175 °C; High Surge Current Capacity; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSH20120A |
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FFSH20120A-F155
onsemi
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1 | Max Junction Temperature 175 °C; Avalanche Rated 200 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSH20120A-F155 |
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RM352-140-321-5500BN
Molex
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1 | AirBorn R Series, Rectangular Board Mount Plug, Right-Angle, Plastic Body, 3 Rows, 0.075"/1.91mm Pitch, with Mounting Ears, Through Hole, 0.140" Tail Length, Guide Set, Gold Termination, 140 Circuits | Other | RM352-140-321-5500BN |
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![Part Image](["https://componentsearchengine.com/Images/9/FDA24N50.jpg",null,null])
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![Part Image](["https://componentsearchengine.com/Images/1/UJ4SC075009B7S.jpg","https://componentsearchengine.com/Images/1/UJ4SC075009B7S.jpg",null])
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