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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	70V08L15PFG8 Renesas Electronics	1	The 70V08 is a high-speed 64K x 8 Dual-Port Static RAM designed to be used as a stand-alone 512K-bit Dual-Port SRAM or as a combination MASTER/SLAVE Dual-Port SRAM for 16-bit-or-more word systems which results in full speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V08L15PFG8	3D model available Symbol and footprint available 3	1 Download Model
	7024L15JG Renesas Electronics	1	The 7024 is a high-speed 4Kx 16 Dual-Port Static RAM designed to be used as a stand-alone 64K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or more word systems. An automatic power down feature controlled by Chip Enable (CE) permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Plastic Leaded Chip Carrier	7024L15JG	3D model not available Symbol and footprint available 2	1 Download Model
	71V3557S80BGI8 Renesas Electronics	1	The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).	BGA	71V3557S80BGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V3558SA133BQG8 Renesas Electronics	1	The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.	BGA	71V3558SA133BQG8	3D model available Symbol and footprint available 3	1 Download Model

	70V631S10BF8 Renesas Electronics	1	The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	BGA	70V631S10BF8	3D model available Symbol and footprint available 3	1 Download Model
	71V416L12BEI Renesas Electronics	1	The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	BGA	71V416L12BEI	3D model available Symbol and footprint available 3	1 Download Model
	71V67703S80BQI Renesas Electronics	1	The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67703S80BQI	3D model available Symbol and footprint available 3	1 Download Model
	R1LP5256ESP-7SI#S0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	Small Outline Packages	R1LP5256ESP-7SI#S0	3D model available Symbol and footprint available 3	1 Download Model
	70V3599S133BC Renesas Electronics	1	The 70V3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3599S133BC	3D model available Symbol and footprint available 3	1 Download Model
	7052L30GB Renesas Electronics	1	The 7052 is a high-speed 2K x 8 FourPort™ Static RAM to be used where multiple access into a common RAM is required. It is designed for systems where on-chip hardware port arbitration is not needed and has four independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by CE, permits the on-chip circuitry of each port to enter a very low power standby power mode. Milita	Other	7052L30GB	3D model available Symbol and footprint available 3	1 Download Model
	70V35L15PFG8 Renesas Electronics	1	The 70V35 is a high-speed 8K x 18 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V35L15PFG8	3D model available Symbol and footprint available 3	1 Download Model
	70T653MS10BC8 Renesas Electronics	1	The 70T653M is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone 18874K-bit Dual-Port RAM. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T653MS10BC8	3D model available Symbol and footprint available 3	1 Download Model
	71V3556SA100BQG8 Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA100BQG8	3D model available Symbol and footprint available 3	1 Download Model
	71V3557S85PFGI Renesas Electronics	1	The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).	Quad Flat Packages	71V3557S85PFGI	3D model available Symbol and footprint available 3	1 Download Model
	71V3577S80BQI Renesas Electronics	1	The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V3577S80BQI	3D model available Symbol and footprint available 3	1 Download Model

	HM1-65162C/883 Renesas Electronics	1	The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Renesas Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allows easy memory board layouts flexible to accommodate a variety of industry standard PROMs, RAMs, ROMs and EPROMs. The HM-65162/883 is ideally suited for use in microprocessor based systems with its 8-bit word length organization.	Ceramic Dual-In-Line Packages	HM1-65162C/883	3D model available Symbol and footprint available 3	1 Download Model
	7130LA100CB Renesas Electronics	1	The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535	Ceramic Dual-In-Line Packages	7130LA100CB	3D model not available Symbol and footprint available 2	1 Download Model
	71V632S5PFGI8 Renesas Electronics	1	The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V632S5PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	70T651S15BF8 Renesas Electronics	1	The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T651S15BF8	3D model available Symbol and footprint available 3	1 Download Model
	7054L20PRFG8 Renesas Electronics	1	The 7054 is a high-speed 4K x 8 FourPort™ Static RAM to be used where multiple access into a common RAM is required. It is designed for systems where on-chip hardware port arbitration is not needed and has four independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by CE, permits the on-chip circuitry of each port to enter a very low power standby power mode. Milita	Quad Flat Packages	7054L20PRFG8	3D model available Symbol and footprint available 3	1 Download Model
	71016S15YG Renesas Electronics	1	The 71016 5V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71016 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71016S15YG	3D model available Symbol and footprint available 3	1 Download Model
	71V65903S80PFGI8 Renesas Electronics	1	The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V65903S80PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	70V7319S166BCI8 Renesas Electronics	1	The 70V7319 is a high-speed 256K x 18 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70V7319S166BCI8	3D model available Symbol and footprint available 3	1 Download Model
	70T659S10BFI8 Renesas Electronics	1	The 70T659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T659S10BFI8	3D model available Symbol and footprint available 3	1 Download Model
	70T3599S133BF8 Renesas Electronics	1	The 70T3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3599S133BF8	3D model available Symbol and footprint available 3	1 Download Model
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