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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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S3JBHR5 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AA S3JBHR5 0 Build or Request
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HC49US3-JB3F18-6.000 ILSI America LLC
1 Parallel - Fundamental Quartz Crystal, 6MHz Nom HC49US3-JB3F18-6.000 0 Build or Request
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NWWS3JB4R30 SEI Stackpole Electronics Inc
1 Fixed Resistor, Wire Wound, 3.2W, 4.3ohm, 5% +/-Tol, 50ppm/Cel, Through Hole Mount, AXIAL NWWS3JB4R30 0 Build or Request
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HS3JBF3 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AA HS3JBF3 0 Build or Request
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WWS3JB56R0 SEI Stackpole Electronics Inc
1 Fixed Resistor, Wire Wound, 3.2W, 56ohm, 5% +/-Tol, 20ppm/Cel, Through Hole Mount, AXIAL WWS3JB56R0 0 Build or Request
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HC49US3-JB9F18-9.000 ILSI America LLC
1 Parallel - Fundamental Quartz Crystal, 9MHz Nom HC49US3-JB9F18-9.000 0 Build or Request
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S3M2600000RCS3JB Hong Kong X'Tals Ltd
1 Series - 3Rd Overtone Quartz Crystal, 26MHz Max, 26MHz Nom S3M2600000RCS3JB 0 Build or Request
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US3JBF Galaxy Semi-Conductor Co Ltd
1 Rectifier Diode, US3JBF 0 Build or Request
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HC49US3-JB9F18-6.990 ILSI America LLC
1 Parallel - Fundamental Quartz Crystal, 6.99MHz Nom HC49US3-JB9F18-6.990 0 Build or Request
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S4M6886000PCS3JB Hong Kong X'Tals Ltd
1 Series - 3Rd Overtone Quartz Crystal, 68.86MHz Max, 68.86MHz Nom S4M6886000PCS3JB 0 Build or Request
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WWS3JB1K00 SEI Stackpole Electronics Inc
1 Fixed Resistor, Wire Wound, 3.2W, 1000ohm, 5% +/-Tol, 20ppm/Cel, Through Hole Mount, AXIAL WWS3JB1K00 0 Build or Request
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S3JB Microdiode Semiconductor (MDD)
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AA S3JB 0 Build or Request
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S3M2600000PCS3JB Hong Kong X'Tals Ltd
1 Series - 3Rd Overtone Quartz Crystal, 26MHz Max, 26MHz Nom S3M2600000PCS3JB 0 Build or Request
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NWWS3JB200R SEI Stackpole Electronics Inc
1 Fixed Resistor, Wire Wound, 3.2W, 200ohm, 5% +/-Tol, 20ppm/Cel, Through Hole Mount, AXIAL NWWS3JB200R 0 Build or Request
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GS3JBF3 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AA GS3JBF3 0 Build or Request
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ES3JB Continental Device India Ltd
1 Rectifier Diode ES3JB 0 Build or Request
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NWWS3JB2K20 SEI Stackpole Electronics Inc
1 Fixed Resistor, Wire Wound, 3.2W, 2200ohm, 5% +/-Tol, 20ppm/Cel, Through Hole Mount, AXIAL NWWS3JB2K20 0 Build or Request
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SS10000000MCS3JB Hong Kong X'Tals Ltd
1 Series - 3Rd Overtone Quartz Crystal, 100MHz Max, 100MHz Nom SS10000000MCS3JB 0 Build or Request
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MRS3JB30L0 SEI Stackpole Electronics Inc
1 Fixed Resistor, Metal Alloy, 3W, 0.03ohm, 5% +/-Tol, -50,50ppm/Cel, MRS3JB30L0 0 Build or Request
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S3M6886000ACS3JB Hong Kong X'Tals Ltd
1 Series - 3Rd Overtone Quartz Crystal, 68.86MHz Max, 68.86MHz Nom S3M6886000ACS3JB 0 Build or Request
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S3JF/S3JBF Microdiode Semiconductor (MDD)
1 Surface mount rectifier, 50-1000V, 3.0A, SMAF, solderable, polarity marked, any position, 0.027g. S3JF/S3JBF 0 Build or Request
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S3JB/S3JC Microdiode Semiconductor (MDD)
1 Surface mount general rectifier, reverse voltage 50-1000V, forward current 3.0A, DO-214AA/SMB package, 0.09g, single phase half-wave 60Hz. S3JB/S3JC 0 Build or Request
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US3JBF SUNMATE electronic Co., LTD
1 Surface mount ultra fast rectifier diode in SMBF case, 3.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated die, designed for automatic assembly.Surface mount ultra-fast rectifier diode in SMBF case, 3.0A average forward current, 50-1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated die, designed for automatic assembly.Surface mount ultra-fast rectifier diode in SMBF case, 3.0A average forward current, 50-1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated die, designed for automatic assembly.Surface mount ultra-fast rectifier diode in SMBF case, 3.0A average forward current, 50-1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated die, operating junction temperature -65 to +150C.Surface mount ultra-fast rectifier diodes in SMBF package, 3.0A average forward current, 50-1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated die, designed for high-efficiency power rectification applications.Surface mount ultra-fast rectifier diode in SMBF case, 3.0A average forward current, 50-1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated die, designed for automatic assembly.Surface mount ultra-fast rectifier diode in SMBF case, 3.0A average forward current, 50-1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated die, designed for high efficiency and automatic assembly. US3JBF 0 Build or Request
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ES3JF/ES3JBF Microdiode Semiconductor (MDD)
1 Surface mount, 50-600V, 3.0A, low leakage, high surge, 260°C/10s, glass passivated, SMAF, 0.064g. ES3JF/ES3JBF 0 Build or Request
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US3JBF Shikues Semiconductor
1 Surface Mount, Low Profile, Glass Passivated, Superfast Recovery, Lead Free, SMBF Case, 57mg. US3JBF 0 Build or Request
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