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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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RBE067N10R1SZN6#HB0
Renesas Electronics
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1 | REXFET-1 N-Channel Power MOSFET100 V - 80 A - 6.7 mΩ - SO8-FL(5×6) | Other | RBE067N10R1SZN6#HB0 |
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RBE020N04R0SZN6#HB0
Renesas Electronics
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1 | The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. | Other | RBE020N04R0SZN6#HB0 |
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RBE030N04R0SZN6#HB0
Renesas Electronics
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1 | The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. | Other | RBE030N04R0SZN6#HB0 |
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RBE05AS20AT2R
ROHM Semiconductor
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1 | ROHM 30V 500mA, Diode, 2-Pin DFN1006 RBE05AS20AT2R | Other | RBE05AS20AT2R |
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RBE035N04R0SZN6#HB0
Renesas Electronics
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1 | The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. | Other | RBE035N04R0SZN6#HB0 |
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RBE019N10R1SZQ4#GB0
Renesas Electronics
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1 | The RBE019N10R1SZQ4 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLL package. The TOLL package features ultra-compact, leadless designs with Wettable Flanks for enhanced thermal performance, reliability, and ease of assembly.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications. | Other | RBE019N10R1SZQ4#GB0 |
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RBE050N04R0SZN6#HB0
Renesas Electronics
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1 | The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. | Other | RBE050N04R0SZN6#HB0 |
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RBE034N15R1SZPW#KB0
Renesas Electronics
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1 | REXFET-1 N-CH MOSFET 150V, 200A | Other | RBE034N15R1SZPW#KB0 |
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RBE034N15R1SZQ4#GB0
Renesas Electronics
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1 | REXFET-1 N-Channel Power MOSFET150 V - 200 A - 3.4 mΩ - TOLL | Other | RBE034N15R1SZQ4#GB0 |
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RBE013N08R1SZQ4#GB0
Renesas Electronics
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1 | 80V, 340A, 1.3mΩ, REXFET-1 N-Channel Power MOSFET in TOLL | Other | RBE013N08R1SZQ4#GB0 |
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RBE023N04R0SZN6#HB0
Renesas Electronics
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1 | The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. | Other | RBE023N04R0SZN6#HB0 |
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RBE039N15R1SZPW#KB0
Renesas Electronics
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1 | The RBE039N15R1SZPW N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for ultra-compact and optimal thermal performance.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications. | Other | RBE039N15R1SZPW#KB0 |
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RBE05SM20AT2R
ROHM Semiconductor
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1 | Schottky Diodes & Rectifiers NPN Driver Transistor | Small Outline Diode Flat Lead | RBE05SM20AT2R |
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RBE01VYM6AFHTR
ROHM Semiconductor
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1 | 6V, 100mA, SOD-323HE, Schottky Barrier Diode for Automotive | Other | RBE01VYM6AFHTR |
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RBE015N10R1SZPW#KB0
Renesas Electronics
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1 | 100V, 340A, 1.5mΩ, REXFET-1 N-Channel Power MOSFET in TOLT | Small Outline Packages | RBE015N10R1SZPW#KB0 |
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RBE029N10R1SZN6#HB0
Renesas Electronics
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1 | The RBE029N10R1SZN6 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications. | Other | RBE029N10R1SZN6#HB0 |
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RBE05VM20ATE-17
ROHM Semiconductor
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1 | Schottky Diodes & Rectifiers Diode Small Signal Schottky 30V 0.5A | Small Outline Diode Flat Lead | RBE05VM20ATE-17 |
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RBE015N10R1SZQ4#GB0
Renesas Electronics
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1 | REXFET-1 N-Channel Power MOSFET100 V - 340 A - 1.5 mΩ - TOLL | Other | RBE015N10R1SZQ4#GB0 |
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RBE013N08R1SZPW#KB0
Renesas Electronics
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1 | 80V, 340A, 1.3mΩ, REXFET-1 N-Channel Power MOSFET in TOLT | Small Outline Packages | RBE013N08R1SZPW#KB0 |
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RBE031N08R1SZN6#HB0
Renesas Electronics
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1 | The RBE031N08R1SZN6 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications. | Other | RBE031N08R1SZN6#HB0 |
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RBE05DHHD
Sullins Connector Solutions
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1 | Card Edge Connector, 10 Contact(s), 2 Row(s), Straight, 0.039 inch Pitch, Solder Terminal, Hole .115-.125 | RBE05DHHD |
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SMR32RCRBE01
SMART Modular Technology Inc
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1 | Rambus DRAM Module, 16MX16, 40ns, CMOS, PSMA184 | SMR32RCRBE01 |
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RBE05DHHR
Sullins Connector Solutions
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1 | Card Edge Connector, 10 Contact(s), 2 Row(s), Straight, 0.039 inch Pitch, Solder Terminal, Locking | RBE05DHHR |
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SMR32ACRBE01
SMART Modular Technology Inc
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1 | Rambus DRAM Module, 16MX16, 40ns, CMOS, PSMA184 | SMR32ACRBE01 |
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RBE05-SERIES
Susco Electronics Inc
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1 | Interface Circuit | RBE05-SERIES |
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