IRHF5 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRHF57214SE Infineon Technologies AG	1	Power Field-Effect Transistor, 2.2A I(D), 250V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF57214SE	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF53034 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	IRHF53034	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF597230 International Rectifier	1	Power Field-Effect Transistor, 4.5A I(D), 200V, 0.54ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF597230	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF54034PBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	IRHF54034PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHF597230 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.5A I(D), 200V, 0.54ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF597230	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF57230SEPBF International Rectifier	1	Power Field-Effect Transistor, 6.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF57230SEPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF58130PBF International Rectifier	1	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF58130PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF58034CM Infineon Technologies AG	1	Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHF58034CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF57Z30SCSPBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF57Z30SCSPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF53130PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF53130PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF597110PBF International Rectifier	1	Power Field-Effect Transistor, 2.6A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF597110PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF57Z30 International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF57Z30	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF53Z30PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF53Z30PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF57133SEPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10.5A I(D), 130V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF57133SEPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF57234SE International Rectifier	1	Power Field-Effect Transistor, 5.2A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF57234SE	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHF55Z30 Infineon Technologies AG	1	Power Field-Effect Transistor	IRHF55Z30	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF58Z30CM International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHF58Z30CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF54130 International Rectifier	1	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF54130	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF57130 International Rectifier	1	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF57130	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF54230 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF54230	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF597130SCS International Rectifier	1	Power Field-Effect Transistor, 6.7A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF597130SCS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF53130 International Rectifier	1	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF53130	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF53034PBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	IRHF53034PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF58034CM International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHF58034CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHF593110 Infineon Technologies AG	1	Power Field-Effect Transistor, 2.6A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	IRHF593110	3D model not available Symbol and footprint not available 0	0 Build or Request
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