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SS310BF
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode SS32BF with 3.0A average forward current, 20-100V DC blocking voltage, low forward voltage drop, and plastic package rated at UL 94V-0. | SS310BF |
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SS310BF
Shikues Semiconductor
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1 | Surface Mount Schottky Rectifier, 20-200V, low power loss, high efficiency, surge current, SMBF case, 57mg. | SS310BF |
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SS310
Micro Commercial Components
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AC | SS310 |
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SS310HR6G
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB | SS310HR6G |
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SS310B-HF
Comchip Technology Corporation Ltd
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AA | SS310B-HF |
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SS310C
Shandong Jingdao Microelectronics Co Ltd
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1 | Surface Mount Schottky Barrier Rectifier SS32C through SS320C, 20 to 200 V reverse voltage, 3 A average forward current, low forward voltage drop, high surge current capability, suitable for high frequency inverters and polarity protection. | SS310C |
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SS310L
JCET Group
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1 | 3A average forward current Schottky rectifier diode with 100V repetitive peak reverse voltage, 50°C/W thermal resistance from junction to ambient, and surge current capability of 120A, packaged in SMBG surface mount. | SS310L |
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SS310HR7G
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB | SS310HR7G |
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SS310BF
Shandong Jingdao Microelectronics Co Ltd
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1 | Surface Mount Schottky Barrier Rectifier with 20 to 200V reverse voltage and 3.0A forward current, featuring low power loss, high efficiency, and suitability for low voltage, high frequency applications. | SS310BF |
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SS310BF
Luguang Electronic Technology Co Ltd
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1 | Schottky Barrier Rectifier, Case Style : SMBF; IF (A) : 3; VRRM (V) : 100; IFSM (A) : 100; VF (V) : 0.85; @IF (A): 3; IR (µA) TA=25ºC: 0.5 | SS310BF |
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SS310B
Shenzhen Heketai Electronics Co Ltd
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1 | Schottky barrier diode in SMB package with repetitive peak reverse voltage from 20 to 200 V, mean rectifying current of 3.0 A, low forward voltage drop, and high surge current capability for surface mount applications. | SS310B |
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SS310C-HF
Comchip Technology Corporation Ltd
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB | SS310C-HF |
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SS310L
Shenzhen Heketai Electronics Co Ltd
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1 | Schottky barrier diode in SOD-123FL surface mount package with repetitive peak reverse voltage from 20 to 200V, mean rectifying current of 3.0A, low forward voltage drop, and guard ring for overvoltage protection. | SS310L |
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SS310F
JCET Group
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1 | 3A Schottky rectifier diode with 20V to 200V repetitive peak reverse voltage, suitable for surface mount applications, featuring low forward voltage and high surge current capability. | SS310F |
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SS310B
SLKOR
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1 | SS310B |
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SS310
Fairchild Semiconductor Corporation
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB | SS310 |
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SS310B
Galaxy Semi-Conductor Co Ltd
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1 | Rectifier Diode, | SS310B |
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SS310F
AK Semiconductor
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1 | Surface Mount Schottky Barrier Rectifier with reverse voltage from 20 to 200V, forward current of 3A, low forward voltage drop, high surge current capability, and operating junction temperature from -55 to +150°C.Surface Mount Schottky Barrier Rectifier in SMAF package, with reverse voltage ratings from 20V to 200V, forward current up to 3A, low forward voltage drop, and high surge current capability.Surface Mount Schottky Barrier Rectifier SS32F THRU SS320F SMAF with reverse voltage from 20 to 200V, forward current 3A, low forward voltage drop, high surge current capability, and lead-free construction for surface mounting applications.Surface Mount Schottky Barrier Rectifier in SMAF package, with reverse voltage ratings from 20V to 200V, forward current up to 3A, low forward voltage drop, and high surge current capability for use in low voltage, high frequency applications. | SS310F |
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SS310AF
Luguang Electronic Technology Co Ltd
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1 | Schottky Barrier Rectifier, Case Style : SMAF; IF (A) : 3; VRRM (V) : 100; IFSM (A) : 100; VF (V) : 0.85; @IF (A): 3; IR (µA) TA=25ºC: 0.5 | SS310AF |
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SS310HM6G
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB | SS310HM6G |
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SS310BG
Shikues Semiconductor
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1 | Case: SMB, Terminals: Solderable per MIL-STD-750, Method 2026, Approx. Weight: 95mg, Metal silicon junction, Surface Mount Schottky Barrier Rectifier, Reverse Voltage - 20 to 200 V, Forward Current - 3 A. | SS310BG |
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SS310F
Shenzhen Heketai Electronics Co Ltd
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1 | Schottky barrier diode in SMAF surface mount package, with repetitive peak reverse voltage from 20V to 200V, forward current up to 3.0A, low forward voltage drop, and high surge current capability. | SS310F |
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SS310L(SMAG)
JCET Group
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1 | 3A average forward current Schottky rectifier diode with 100V maximum repetitive peak reverse voltage, 55°C/W junction-to-ambient thermal resistance, and low forward voltage drop, suitable for surface mount applications. | SS310L(SMAG) |
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SS310BF
Shenzhen Heketai Electronics Co Ltd
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1 | Schottky barrier diode in SMBF surface mount package with repetitive peak reverse voltage from 20 to 200 V, mean rectifying current of 3.0 A, low forward voltage drop, and high surge current capability. | SS310BF |
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SS310B
Luguang Electronic Technology Co Ltd
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1 | Schottky Barrier Rectifier, Case Style : SMB; IF (A) : 3; VRRM (V) : 100; IFSM (A) : 100; VF (V) : 0.85; @IF (A): 3; IR (µA) TA=25ºC: 0.5 | SS310B |
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