2SC2712 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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2SC2712-GR,LF(B Toshiba America Electronic Components
1 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 2SC2712-GR,LF(B 0 Build or Request
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2SC2712-Y(T5LMATVF Toshiba America Electronic Components
1 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 2SC2712-Y(T5LMATVF 0 Build or Request
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2SC2712-Y(TLSPF,T) Toshiba America Electronic Components
1 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 2SC2712-Y(TLSPF,T) 0 Build or Request
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2SC2712L-L-T92-R Unisonic Technologies Co Ltd
1 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 2SC2712L-L-T92-R 0 Build or Request
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2SC2712-GR(T5LNS,F Toshiba America Electronic Components
1 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 2SC2712-GR(T5LNS,F 0 Build or Request
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2SC2712-Y;LF(T Toshiba America Electronic Components
1 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 2SC2712-Y;LF(T 0 Build or Request
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2SC2712-O,LXGF Toshiba America Electronic Components
1 Small Signal Bipolar Transistor 2SC2712-O,LXGF 0 Build or Request
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2SC2712-O(T5L,F,T) Toshiba America Electronic Components
1 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 2SC2712-O(T5L,F,T) 0 Build or Request
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2SC2712-Y(5LKENW,F Toshiba America Electronic Components
1 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 2SC2712-Y(5LKENW,F 0 Build or Request
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2SC2712-Y-T Micro Commercial Components
1 Small Signal Bipolar Transistor 2SC2712-Y-T 0 Build or Request
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2SC2712G-G-T92-R Unisonic Technologies Co Ltd
1 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 2SC2712G-G-T92-R 0 Build or Request
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2SC2712Y-T Rectron Semiconductor
1 Small Signal Bipolar Transistor 2SC2712Y-T 0 Build or Request
Part Image Part Image 1 Small Signal Bipolar Transistors 2SC2712-Y 1 Download Model
Part Image Part Image 1 Small Signal Bipolar Transistors 2SC2712-BL-TP 1 Download Model
Part Image Part Image 1 High voltage and high current: VCEO= 50 V, IC= 150 mA; hFE= 70-700; NF = 1dB, 10dB; VCE(sat)= 0.25 V; VBE(sat)= 1.2 V; fT= 80 MHz. 2SC2712-Y 0 Build or Request
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2SC2712YT5LT Toshiba America Electronic Components
1 Transistor 2SC2712YT5LT 0 Build or Request
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2SC2712GR Galaxy Semi-Conductor Co Ltd
1 Transistor, 2SC2712GR 0 Build or Request
Part Image Part Image 1 NPN transistor in SOT-23 package with 50 V collector-emitter voltage, 150 mA continuous collector current, low noise figure of 1.0 dB typical, and DC current gain ranging from 70 to 700, suitable for audio frequency amplifier applications. 2SC2712(RANGE:200-400) 0 Build or Request
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2SC2712BL Galaxy Semi-Conductor Co Ltd
1 Transistor, 2SC2712BL 0 Build or Request
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2SC2712Y Bytesonic Corporation
1 Transistor 2SC2712Y 0 Build or Request
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2SC2712O Galaxy Semi-Conductor Co Ltd
1 Transistor, 2SC2712O 0 Build or Request
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2SC2712GR JCET Group
1 NPN transistor in SOT-23 package with low noise figure of 1 dB typical, 10 dB maximum, complementary to 2SA1162, featuring 50 V collector-emitter voltage, 150 mA continuous collector current, and transition frequency of 80 MHz. 2SC2712GR 0 Build or Request
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2SC2712GR Shikues Semiconductor
1 2SC2712GR 0 Build or Request
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2SC2712Y Jiangsu Changjiang Electronics Technology Co Ltd
1 Transistor 2SC2712Y 0 Build or Request
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2SC2712-Y(TE85L) Toshiba America Electronic Components
1 Small Signal Bipolar Transistor 2SC2712-Y(TE85L) 0 Build or Request
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