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M10082040054X0ISAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0ISAY |
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M30162040108X0PWAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040108X0PWAY |
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DS2401-SL+T&R
Analog Devices
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1 | Security ICs / Authentication ICs Silicon Serial Number | Other | DS2401-SL+T&R |
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M10042040054X0ISAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040054X0ISAY |
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MR2A08AMYS35
Everspin Technologies
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1 | MRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM | Small Outline Packages | MR2A08AMYS35 |
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MR20H40CDF
Everspin Technologies
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1 | NVRAM 4Mb 3.3V 50Mhz 512K x 8 SPI | Small Outline No-lead | MR20H40CDF |
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THGBMDG5D1LBAIT
Toshiba
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1 | NAND Flash Serial e-MMC 3V/3.3V 4G-bit 153-Pin WFBGA | BGA | THGBMDG5D1LBAIT |
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MR5A16ACMA35
Everspin Technologies
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1 | MRAM 3.3V 32Mb MRAM with unlimited read & write endurance, currently MSL 6 | BGA | MR5A16ACMA35 |
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MR25H10MDF
Everspin Technologies
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1 | MRAM 1Mbit Serial-SPI 3.3V Automotive 8-Pin DFN EP Tray | Small Outline No-lead | MR25H10MDF |
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MR2A16ACMA35
Everspin Technologies
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1 | MRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM | BGA | MR2A16ACMA35 |
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MB85R1002ANC-GE1
FUJITSU
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1 | -40°C ~ 85°C FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 150 ns 48-TSOP Surface mount | Small Outline Packages | MB85R1002ANC-GE1 |
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S70KS1281DPBHI020
Infineon
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1 | DRAM IC 128 Mb FLASH MEMORY | BGA | S70KS1281DPBHI020 |
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MB85RC128APNF-G-JNE1
FUJITSU
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1 | FUJITSU - MB85RC128APNF-G-JNE1 - NVRAM, FRAM, 128 Kbit, 16K x 8bit, I2C, SOP | Small Outline Packages | MB85RC128APNF-G-JNE1 |
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MR0A16AVYS35
Everspin Technologies
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1 | NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM | Small Outline Packages | MR0A16AVYS35 |
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M24SR02-YMN6T/2
STMicroelectronics
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1 | Dynamic NFC/RFID tag IC with 2-Kbit EEPROM, NFC Forum Type 4 Tag and I2C interface | Small Outline Packages | M24SR02-YMN6T/2 |
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MR10Q010VMBR
Everspin Technologies
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1 | NVRAM 1Mb 128Kx8 QUAD SPI MRAM -40 - +105C | BGA | MR10Q010VMBR |
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IRMCF171TR
Infineon
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1 | INFINEON - IRMCF171TR - Motor Controller, Sensorless, Three Phase AC, 1 Output, 3.3 V Supply, 120 MHz, 52KB Flash, LQFP-48 | Quad Flat Packages | IRMCF171TR |
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47C16-E/P
Microchip
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1 | SRAM 16k, 5.0V EERAM EXT | Dual-In-Line Packages | 47C16-E/P |
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CY15B064Q-SXA
Infineon
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1 | FRAM 64Kbit Serial-SPI Interface 3.3V Automotive 8-Pin SOIC N Tube | Small Outline Packages | CY15B064Q-SXA |
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M10042040108X0PWAR
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10042040108X0PWAR |
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M30082040054X0ISAR
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040054X0ISAR |
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M30042040108X0ISAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040108X0ISAR |
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M10042040054X0PWAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10042040054X0PWAY |
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M10042040054X0PSAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040054X0PSAY |
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M10042040054X0ISAR
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040054X0ISAR |
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