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ADCR-T02R7SA205MB
ABRACON
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1 | CAP 2F 2.7V TH | Capacitor, Polarized Radial Diameter | ADCR-T02R7SA205MB |
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71421SA20J
Renesas Electronics
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1 | The 71421 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a "SLAVE" Dual-Port RAM together with the 71321 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. | Plastic Leaded Chip Carrier | 71421SA20J |
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71V35761SA200BGI
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA200BGI |
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71V35761SA200BQG
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA200BQG |
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6116SA20SOG8
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA20SOG8 |
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MHR0317SA207F70
Murata Electronics
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1 | Resistance : 200.0MΩ,Tolerance : ±1%,Single use,Rated power : 0.8W, Max. operating voltage : 7.00kVdc | Other | MHR0317SA207F70 |
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MHR0319SA205F70
Murata Electronics
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1 | High voltage resistor 1W, 1.4kVdc, 2MΩ, -40°C to +125°C | Other | MHR0319SA205F70 |
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2SA2056(TE85L,F)
Toshiba
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1 | Toshiba 2SA2056(TE85L,F) PNP Bipolar Transistor, 2 A, 50 V, 3-Pin TSM | Other | 2SA2056(TE85L,F) |
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71342SA20J8
Renesas Electronics
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1 | The 71342 is a high-speed 4K x 8 Dual-Port Static RAM containing a fully independent semaphore logic block to assist in arbitrating between ports. This block contains unassigned flags which can be accessed by either side, however, only one side can control the flag at any time. An automatic power down feature, controlled by CE and SEM, permits the on-chip circuitry of each port to enter a very low standby power mode (both CE and SEM HIGH). | Plastic Leaded Chip Carrier | 71342SA20J8 |
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71342SA20PF8
Renesas Electronics
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1 | The 71342 is a high-speed 4K x 8 Dual-Port Static RAM containing a fully independent semaphore logic block to assist in arbitrating between ports. This block contains unassigned flags which can be accessed by either side, however, only one side can control the flag at any time. An automatic power down feature, controlled by CE and SEM, permits the on-chip circuitry of each port to enter a very low standby power mode (both CE and SEM HIGH). | Quad Flat Packages | 71342SA20PF8 |
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MHR0422SA207F70
Murata Electronics
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1 | Resistance : 200.0MΩ,Tolerance : ±1%,Single use,Rated power : 1.3W, Max. operating voltage : 9.00kVdc | Other | MHR0422SA207F70 |
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SIT8944BE-13-18SA2.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BE-13-18SA2.000000 |
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6116SA20DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA20DB |
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6116SA20SOG
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA20SOG |
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NSV2SA2029M3T5G
onsemi
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1 | Reduces Board Space | Other | NSV2SA2029M3T5G |
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RFSA2013
Qorvo
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1 | RFMD - RFSA2013 - ATTENUATOR, V/CONT, 50-4000MHZ,16QFN | Quad Flat No-Lead | RFSA2013 |
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SA20-T
Micro Commercial Components
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1 | Transient Suppressor, | SA20-T |
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SA20-B
Micro Commercial Components
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1 | Transient Suppressor, | SA20-B |
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SA20-BP
Micro Commercial Components
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1 | Trans Voltage Suppressor Diode, 500W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 | SA20-BP |
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SA20-13
Diodes Incorporated
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1 | Trans Voltage Suppressor Diode, 500W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 | SA20-13 |
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SA20-G
Sangdest Microelectronics (Nanjing) Co Ltd
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1 | Trans Voltage Suppressor Diode, 500W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-15, PLASTIC PACKAGE-2 | SA20-G |
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SA20-B
Littelfuse Inc
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1 | TVS DIODE | SA20-B |
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SA20-GT3
Sangdest Microelectronics (Nanjing) Co Ltd
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1 | Trans Voltage Suppressor Diode, 500W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 | SA20-GT3 |
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SA20-BP-HF
Micro Commercial Components
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1 | Trans Voltage Suppressor Diode | SA20-BP-HF |
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SA20-TB
Won-Top Electronics Co Ltd
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1 | Trans Voltage Suppressor Diode, 500W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 | SA20-TB |
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