1N5819WS Model Download Search Results
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1N5819WS
SUNMATE electronic Co., LTD
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1 | Schottky barrier diode 1N5819WS in SOD-323 package features 40V peak repetitive reverse voltage, 350mA forward continuous current, low forward voltage drop, low capacitance of 50pF, and fast reverse recovery time of 10ns. | 1N5819WS |
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1N5819WS
AK Semiconductor
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1 | Schottky barrier diode in SOD-323 package with low forward voltage drop, negligible reverse recovery time, and reverse voltage ratings of 20V, 30V, and 40V for 1N5817WS, 1N5818WS, and 1N5819WS respectively. | 1N5819WS |
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1N5819WS
Shenzhen Heketai Electronics Co Ltd
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1 | Schottky barrier diode in SOD-323 surface mount package with low forward voltage, 20V to 40V maximum DC blocking voltage, 1.0A average forward rectified current, and operating temperature range from -50 to +125°C. | 1N5819WS |
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1N5819WS
DC Components Co Ltd
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 40V V(RRM), Silicon | 1N5819WS |
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G1N5819WS
Suzhou Good-Ark Electronics Co Ltd
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 40V V(RRM), Silicon | G1N5819WS |
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CP108-1N5819-WS
Central Semiconductor Corp
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1 | Rectifier Diode | CP108-1N5819-WS |
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