2SC2120-Y(F,T) Model Download Search Results
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2SC2120-Y(F,T)
Toshiba
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1 | Transistor Silicon NPN Epitaxial Type (PCT process) , through hole , 800 mA , 600 mW , 35 V , -55 °C to +150 °C | Other | 2SC2120-Y(F,T) |
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![Part Image](["https://componentsearchengine.com/2D/0/690179.png",null,null])
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