4.0M5 Model Download Search Results
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ISL71040M50RTZ-T
Renesas Electronics
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1 | The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4. 5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximu | Small Outline No-lead | ISL71040M50RTZ-T |
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CHT06C240M5GAF7411
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT06C240M5GAF7411 |
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CHT13C240M5GAFT1K0
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT13C240M5GAFT1K0 |
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CHT06C240M5GAFT1K0
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT06C240M5GAFT1K0 |
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TEH140M50R0FE
Ohmite
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1 | RES, 50R, 140W, TO-247, THICK FILM; Resistance:50ohm; Product Range:TEH140 Series; Power Rating:140W; Resistance Tolerance:± 1%; Resistor Case Style:TO-247; Voltage Rating:500V; Resistor Element Type:Thick Film RoHS Compliant: Yes | Other | TEH140M50R0FE |
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CHT12C240M5GAFT1K0
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT12C240M5GAFT1K0 |
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CHT12C240M5GAFTU
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT12C240M5GAFTU |
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CHT08C240M5GAFT500
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT08C240M5GAFT500 |
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CHT06C240M5GAFT100
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT06C240M5GAFT100 |
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C0805C240M5RACTU
Yageo Group
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1 | SMD Comm X7R, Ceramic, 24 pF, 20%, 50 VDC, 125 VDC, 125°C, -55°C, X7R, SMD, MLCC, Temperature Stable, Class II, 2.5 % , 100 GOhms, 11 mg, 0805, 2mm, 1.25mm, 0.78mm, 0.75mm, 0.5mm, 4000, 78 Weeks, 80 | Other | C0805C240M5RACTU |
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C0805C240M5GACTU
Yageo Group
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1 | SMD Comm C0G, Ceramic, 24 pF, 20%, 50 VDC, 125 VDC, 125°C, -55°C, C0G, SMD, MLCC, Ultra-Stable, Low Loss, Class I, 0.1 % , 100 GOhms, 11 mg, 0805, 2mm, 1.25mm, 0.78mm, 0.75mm, 0.5mm, 4000, 78 Weeks, 120 | Other | C0805C240M5GACTU |
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CHT12C240M5GAFT100
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT12C240M5GAFT100 |
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CHT08C240M5GAFT1K0
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT08C240M5GAFT1K0 |
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CHT08C240M5GAF7210
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT08C240M5GAF7210 |
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CHT08C240M5GAFTU
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT08C240M5GAFTU |
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CHT13C240M5GAF7210
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT13C240M5GAF7210 |
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ISL71040M50RTZ
Renesas Electronics
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1 | The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4. 5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximu | Small Outline No-lead | ISL71040M50RTZ |
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CHT06C240M5GAFT500
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT06C240M5GAFT500 |
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CHT08C240M5GAFT050
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT08C240M5GAFT050 |
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CHT13C240M5GAFT050
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT13C240M5GAFT050 |
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CHT13C240M5GAFT100
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT13C240M5GAFT100 |
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CHT06C240M5GAFT250
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT06C240M5GAFT250 |
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CHT12C240M5GAF7210
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT12C240M5GAF7210 |
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CHT12C240M5GAFT250
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT12C240M5GAFT250 |
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CHT13C240M5GAFT250
Yageo Group
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1 | SMD, MLCC, High Temperature, 260C | Other | CHT13C240M5GAFT250 |
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