56L25 Model Download Search Results
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56L25
Edal Industries Inc
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1 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.56A, 2500V V(RRM), Silicon | 56L25 |
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71256L25DB
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 71256L25DB |
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71256L25YG8
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Other | 71256L25YG8 |
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71256L25YGI
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Other | 71256L25YGI |
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71256L25YGI8
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Other | 71256L25YGI8 |
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71256L25YG
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Other | 71256L25YG |
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56L256
Edal Industries Inc
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1 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.56A, 25600V V(RRM), Silicon | 56L256 |
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56L255
Edal Industries Inc
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1 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.56A, 25500V V(RRM), Silicon | 56L255 |
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56L252
Edal Industries Inc
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1 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.56A, 25200V V(RRM), Silicon | 56L252 |
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56L251
Edal Industries Inc
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1 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.56A, 25100V V(RRM), Silicon | 56L251 |
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56L259
Edal Industries Inc
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1 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.56A, 25900V V(RRM), Silicon | 56L259 |
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56L250
Edal Industries Inc
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1 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.56A, 25000V V(RRM), Silicon | 56L250 |
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56L254
Edal Industries Inc
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1 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.56A, 25400V V(RRM), Silicon | 56L254 |
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56L257
Edal Industries Inc
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1 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.56A, 25700V V(RRM), Silicon | 56L257 |
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56L253
Edal Industries Inc
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1 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.56A, 25300V V(RRM), Silicon | 56L253 |
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56L258
Edal Industries Inc
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1 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.56A, 25800V V(RRM), Silicon | 56L258 |
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P4C1256L-25SMB
Pyramid Semiconductor Corporation
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1 | Standard SRAM, 32KX8, 25ns, CMOS, PDSO28 | P4C1256L-25SMB |
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FT61256L-25DWM
Force Technologies Ltd
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1 | Standard SRAM, 32KX8, 25ns, CMOS, CDIP28 | FT61256L-25DWM |
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71256L25PI
Integrated Device Technology Inc
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1 | Standard SRAM, 32KX8, 25ns, CMOS, PDIP28 | 71256L25PI |
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P4C1256L-25SILF
Pyramid Semiconductor Corporation
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1 | Standard SRAM, 32KX8, 25ns, CMOS, PDSO28 | P4C1256L-25SILF |
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IDT71256L25PEG8
Integrated Device Technology Inc
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1 | Standard SRAM, 32KX8, 25ns, CMOS, PDSO28 | IDT71256L25PEG8 |
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RBR56L25801QM
TT Electronics Resistors
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1 | RESISTOR, WIRE WOUND, 0.125W, 0.02%, 10ppm, 25800ohm, THROUGH HOLE MOUNT, AXIAL LEADED | RBR56L25801QM |
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RBR56L25900BR
TT Electronics Resistors
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1 | RESISTOR, WIRE WOUND, 0.125W, 0.1%, 10ppm, 2590ohm, THROUGH HOLE MOUNT, AXIAL LEADED | RBR56L25900BR |
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HVRT56L2525B2
Ohmcraft
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1 | Fixed Resistor, Metal Glaze/thick Film, 6W, 2.52e+07ohm, 40000V, 0.1% +/-Tol, 200ppm/Cel, Through Hole Mount | HVRT56L2525B2 |
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P4C1256L-25DMB
Pyramid Semiconductor Corporation
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1 | Standard SRAM, 32KX8, 25ns, CMOS, CDIP28 | P4C1256L-25DMB |
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![Part Image](["https://componentsearchengine.com/Images/1/71256L25YG8.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/13939835.4.9.png",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/13939836.4.4.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/71256L25YG.jpg",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/soic_28.jpg"])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/dip_28.jpg"])
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