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6116LA45DB Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Dual-In-Line Packages 6116LA45DB 1 Download Model
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6116LA45DB Integrated Device Technology Inc
1 Standard SRAM, 2KX8, 45ns, CMOS, CDIP24 6116LA45DB 0 Build or Request
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IDT6116LA45DB Integrated Device Technology Inc
1 Standard SRAM, 2KX8, 45ns, CMOS, CDIP24 IDT6116LA45DB 0 Build or Request
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IDT6116LA45DB Renesas Electronics Corporation
1 Standard SRAM, 2KX8, 45ns, CMOS, CDIP24 IDT6116LA45DB 0 Build or Request
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