AO4606 Model Download Search Results
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AO4606
Alpha & Omega Semiconductors
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1 | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6A I(D), 30V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | Small Outline Packages | AO4606 |
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AO4606
Shenzhen Heketai Electronics Co Ltd
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1 | Complementary MOSFET pair in SOP-8 package with 30V drain-source voltage, 6A continuous drain current for N-channel and -6.5A for P-channel, RDS(ON) ≤30mΩ (N-channel) and ≤28mΩ (P-channel), suitable for level-shifted high-side switching applications. | AO4606 |
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AO4606
VBsemi Electronics Co Ltd
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1 | N- and P-Channel 30 V MOSFET in SO-8 package, featuring trench technology, with RDS(on) of 0.018 ohm (N-channel) and 0.032 ohm (P-channel), suitable for motor drive and mobile power bank applications. | AO4606 |
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AO4606A
Alpha & Omega Semiconductor
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1 | Power Field-Effect Transistor, 7.2A I(D), 30V, 0.024ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | AO4606A |
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AO4606L
Alpha & Omega Semiconductor
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1 | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | AO4606L |
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![Part Image](["https://componentsearchengine.com/2D/0T/2811925.1.1.png",null,null])
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