CJ340 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
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CJ3407 Changjiang Electronics Tech (CJ)
1 MOSFET P Channel 30V 4.1A 3V @ 250uA 60mΩ @ 4.1A,10V SOT-23(SOT-23-3) RoHS SOT23 (3-Pin) CJ3407 1 Download Model
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CJ3401 Changjiang Electronics Tech (CJ)
1 MOSFET P Channel 30V 4.2A 1.3V @ 250uA 65mΩ @ 4.2A,10V SOT-23(SOT-23-3) RoHS SOT23 (3-Pin) CJ3401 1 Download Model
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CJ3400 Changjiang Electronics Tech (CJ)
1 MOSFET N Channel 30V 5.8A 1.4V @ 250uA 35mΩ @ 5.8A,10V SOT-23(SOT-23-3) RoHS SOT23 (3-Pin) CJ3400 1 Download Model
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CJ3404 JCET Group
1 N-channel enhancement mode MOSFET in SOT-23 package with 30V drain-source voltage, 5.8A continuous drain current, and low RDS(on) of 30mΩ at VGS=10V, suitable for load switch and PWM applications. CJ3404 0 Build or Request
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CJ3407 JCET Group
1 P-Channel Enhancement Mode MOSFET in SOT-23 package with -30V Drain-Source Voltage, -4.1A continuous drain current, and low on-resistance of 60 mΩ at VGS=-10V, suitable for load switch and PWM applications. CJ3407 0 Build or Request
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CJ3404-HF Comchip Technology Corporation Ltd
1 Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET CJ3404-HF 0 Build or Request
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CJ3400 JCET Group
1 CJ3400 N-Channel Enhancement Mode MOSFET in SOT-23 package with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 35mΩ at VGS=10V, designed for high-density power applications. CJ3400 0 Build or Request
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CJ3401 JCET Group
1 CJ3401 P-Channel Enhancement Mode MOSFET in SOT-23 package with -30V drain-source voltage, -4.2A continuous drain current, and low on-resistance of 65mΩ at VGS=-10V, suitable for high-density power management applications. CJ3401 0 Build or Request
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CJ3406 JCET Group
1 N-channel enhancement mode MOSFET in SOT-23 package with 30V drain-source voltage, 3.6A continuous drain current, and low on-resistance of 65mΩ at 10V gate-source voltage. CJ3406 0 Build or Request
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CJ3400-HF Comchip Technology Corporation Ltd
1 Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET CJ3400-HF 0 Build or Request
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CJ3406 Jiangsu Changjiang Electronics Technology Co Ltd
1 Transistor CJ3406 0 Build or Request
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CJ3401A JCET Group
1 P-Channel Enhancement Mode MOSFET in SOT-23 package, with -30V Drain-Source Voltage, -4.2A continuous drain current, and 60mΩ typical RDS(on) at -10V VGS. CJ3401A 0 Build or Request
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CJ3400A JCET Group
1 N-channel enhancement mode MOSFET in SOT-23 package with 30 V drain-source voltage, 5.8 A continuous drain current, and low on-resistance of 32 mΩ at 10 V gate-source voltage. CJ3400A 0 Build or Request
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CJ3402 JCET Group
1 N-channel MOSFET in SOT-23 package with 30V drain-source voltage, 4A continuous drain current, and on-resistance of 55mΩ at 10V, suitable for load switch and PWM applications. CJ3402 0 Build or Request
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CJ3404 Jiangsu Changjiang Electronics Technology Co Ltd
1 Transistor CJ3404 0 Build or Request
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CJ3401-HF Comchip Technology Corporation Ltd
1 Small Signal Field-Effect Transistor, 4.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET CJ3401-HF 0 Build or Request
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AD-CJ3400 JCET Group
1 N-channel MOSFET in SOT-23 package with 30V drain-source voltage, 5.8A continuous drain current, and low on-state resistance of 35mΩ at 10V gate-source voltage, qualified to AEC-Q101 standards. AD-CJ3400 0 Build or Request
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