CJQ44 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	CJQ4435 Changjiang Electronics Tech (CJ)	1	P Channel 30V 9.1A 3V @ 250uA 24 mΩ @ 9.1A,10V 1.4W SOP-8_150mil MOSFET RoHS	Small Outline Packages	CJQ4435	3D model available Symbol and footprint available 3	1 Download Model
	CJQ4459 JCET Group	1	P-Channel Power MOSFET CJQ4459 in SOP8 package with -30V drain-source voltage, -6.5A continuous drain current, and low RDS(on) of 46mΩ at -10V VGS, suitable for load switch and battery protection applications.		CJQ4459	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJQ4438 JCET Group	1	N-channel MOSFET in SOP8 package with 60V drain-source voltage, 8.2A continuous drain current, 22mΩ on-resistance at 10V VGS, and low gate charge suitable for load switch and PWM applications.		CJQ4438	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJQ4406A JCET Group	1	N-Channel Power MOSFET in SOP8 package, 30V drain-source voltage, 10A continuous drain current, with low on-resistance of 8.3mΩ at 10V gate-source voltage, suitable for low-side switching applications.		CJQ4406A	3D model not available Symbol and footprint not available 0	0 Build or Request

	CJQ4435 JCET Group	1	P-Channel Power MOSFET CJQ4435 with -30V Drain-Source Voltage, -9.1A Continuous Drain Current, and low RDS(on) of 24mΩ at -10V VGS, suitable for battery and load switch applications in compact SOP8 package.		CJQ4435	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJQ4410 JCET Group	1	N-channel MOSFET in SOP8 package with 30V drain-source voltage, 7.5A continuous drain current, and low on-resistance of 13.5mΩ at 10V gate-source voltage, suitable for power switching applications.		CJQ4410	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJQ4406 JCET Group	1	N-Channel MOSFET in SOP8 package with 30V drain-source voltage, 10A continuous drain current, 12mΩ on-resistance at 10V gate-source voltage, and low gate charge for high side switch and load switch applications.		CJQ4406	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJQ4459A JCET Group	1	P-Channel MOSFET in SOP8 package, 30V VDS, -6A continuous drain current, 28mΩ RDS(on) at -10V VGS, suitable for load switch and battery protection applications.		CJQ4459A	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJQ4435S JCET Group	1	P-Channel Power MOSFET in SOP8 package with -30V Drain-Source Voltage, -7.3A continuous drain current, 18mΩ typical RDS(on) at -10V VGS, featuring trench technology for low gate resistance and optimized performance in battery and load switch applications.		CJQ4435S	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJQ4407S JCET Group	1	P-Channel MOSFET in SOP8 package with -30V drain-source voltage, -11A continuous drain current, and 15mΩ typical RDS(on) at -10V gate-source voltage.		CJQ4407S	3D model not available Symbol and footprint not available 0	0 Build or Request

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