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Part Image Part Image 1 TRANS GAN 100V 18A BUMPED DIE Other EPC2016C 1 Download Model
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EPC2016C Efficient Power Conversion
1 Power Field-Effect Transistor, 18A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET EPC2016C 0 Build or Request
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