ESD5Z3.3T1G Model Download Search Results
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ESD5Z3.3T1G
onsemi
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1 | Low Clamping Voltage; Small Body Outline Dimensions: 0.047″ x 0.032″ (1.20 mm x 0.80 mm); Low Leakage; Response Time is Typically < 1 ns; IEC61000−4−2 Level 4 ESD Protection and IEC61000−4−4 Level 4 EFT Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Peak Power up to 240 Watts @ 8 x 20 s Pulse; Low Body Height: 0.028″ (0.7 mm); ESD Rating of Class 3 (> 16 kV) per Human Body Model; These Devices are Pb−Fre | Small Outline Diode Flat Lead | ESD5Z3.3T1G |
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SZESD5Z3.3T1G
onsemi
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1 | Low Clamping Voltage; Small Body Outline Dimensions: 0.047″ x 0.032″ (1.20 mm x 0.80 mm); Low Leakage; Response Time is Typically < 1 ns; IEC61000−4−2 Level 4 ESD Protection and IEC61000−4−4 Level 4 EFT Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Peak Power up to 240 Watts @ 8 x 20 s Pulse; Low Body Height: 0.028″ (0.7 mm); ESD Rating of Class 3 (> 16 kV) per Human Body Model; These Devices are Pb−Fre | Small Outline Diode Flat Lead | SZESD5Z3.3T1G |
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S-SLESD5Z3.3T1G
Surge Components Inc
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1 | Trans Voltage Suppressor Diode, 200W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon | S-SLESD5Z3.3T1G |
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LESD5Z3.3T1G
LRC Leshan Radio Co Ltd
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1 | Trans Voltage Suppressor Diode, 158W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon | LESD5Z3.3T1G |
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SLESD5Z3.3T1G
Surge Components Inc
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1 | Trans Voltage Suppressor Diode, 200W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon | SLESD5Z3.3T1G |
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S-LESD5Z3.3T1G
LRC Leshan Radio Co Ltd
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1 | Trans Voltage Suppressor Diode, 158W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon | S-LESD5Z3.3T1G |
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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