FDB04 Model Download Search Results

Showing 11 of 11 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDB045AN08A0-F085 onsemi	1	Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FDB045AN08A0-F085	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDB045AN08A0_F085 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FDB045AN08A0_F085	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDB045AN08A0-SN00005 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FDB045AN08A0-SN00005	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDB045AN08A0_F085 onsemi	1	75V, 80A, 3.9mΩ, D2PAK N-Channel PowerTrench®, TO-263 2L (D2PAK), 6400-TAPE REEL		FDB045AN08A0_F085	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDB045AN08A0_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FDB045AN08A0_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDB045AN08A0 onsemi	1	Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FDB045AN08A0	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDB045AN08A0 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FDB045AN08A0	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDB047N10 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FDB047N10	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDB047N10 onsemi	1	RoHS compliant; High power and current handing capability; Fast switching speed; RDS(on) = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A; Low Gate Charge; High performance trench technology for extremely low RDS(on)		FDB047N10	3D model available Symbol and footprint not available 1	1 Download Model
	8FDB-0.455 Hy-Q International Pty Ltd	1	XO, Clock		8FDB-0.455	3D model not available Symbol and footprint not available 0	0 Build or Request
	14FDB-0.455 Hy-Q International Pty Ltd	1	XO, Clock		14FDB-0.455	3D model not available Symbol and footprint not available 0	0 Build or Request

Can't find what you're looking for? Request this part