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Image Part Number D.S Description Package Category Prices / Stock Model Action
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FDB3682 onsemi
1 Qualified to AEC Q101 ; RDS(ON) = 32mΩ(Typ.), VGS = 10V, ID = 32A ; Low Miller Charge ; UIS Capability (Single Pulse and Repetitive Pulse) ; Qg(tot) = 18.5nC (Typ.), VGS = 10V ; Low QRR Body Diode Other FDB3682 1 Download Model
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FDB3682 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB FDB3682 0 Build or Request
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FDB3682_NL Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB FDB3682_NL 0 Build or Request
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