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FDB5800
onsemi
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1 | RoHS Compliant; Qualified to AEC Q101; RDS(on) = 4.6mΩ (Typ.) @ VGS = 10V, ID = 80A; High power and current handling capability; Low Gate Charge; High performance trench technology for extermly low RDS(on) | Other | FDB5800 |
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FDB5800
Rochester Electronics LLC
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1 | 80A, 60V, 0.0126ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT PACKAGE-3 | FDB5800 |
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FDB5800_F085
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | FDB5800_F085 |
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FDB5800
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 80A I(D), 60V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FDB5800 |
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