FDC6561AN Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDC6561AN onsemi	1	2.5 A, 30 V ; RDS(ON) = 0.145 Ω @ VGS = 4.5 V ; Very fast switching ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) ; Low gate charge (2.1nC typical ; RDS(ON) = 0.095 Ω @ VGS = 10 V	SOT23 (6-Pin)	FDC6561AN	3D model available Symbol and footprint available 3	1 Download Model
	FDC6561AN Rochester Electronics LLC	1	2500mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6		FDC6561AN	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC6561AN Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDC6561AN	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC6561AN_NL Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDC6561AN_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDC6561AND87Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDC6561AND87Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC6561AN-NB5S007A Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 2.5A I(D), N-Channel, Metal-oxide Semiconductor FET		FDC6561AN-NB5S007A	3D model not available Symbol and footprint not available 0	0 Build or Request

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